型号 SI6467BDQ-T1-GE3
厂商 Vishay Siliconix
描述 MOSFET P-CH 12V 6.8A 8TSSOP
SI6467BDQ-T1-GE3 PDF
代理商 SI6467BDQ-T1-GE3
标准包装 3,000
系列 TrenchFET®
FET 型 MOSFET P 通道,金属氧化物
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 12V
电流 - 连续漏极(Id) @ 25° C 6.8A
开态Rds(最大)@ Id, Vgs @ 25° C 12.5 毫欧 @ 8A,4.5V
Id 时的 Vgs(th)(最大) 850mV @ 450µA
闸电荷(Qg) @ Vgs 70nC @ 4.5V
功率 - 最大 1.05W
安装类型 表面贴装
封装/外壳 8-TSSOP(0.173",4.40mm 宽)
供应商设备封装 8-TSSOP
包装 带卷 (TR)
其它名称 SI6467BDQ-T1-GE3TR
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